| 1. | Furthermore , we use the wave function and binding energy obtained from above to calculate the photoionization cross - section of the impurity
然后在此基础上，我们采用所选的波函数和得到的束缚能进一步计算了类氢杂质体系的光致电高截面 |
| 2. | The shapes of the photoionization cross - section varying with the photon energy in the two cases are different . we have compared the results with that of previous work
对于每一种情况都与前人的结果做了比较，同时还与无限深势垒的情况做了比较 |
| 3. | In the second part , using the wave function and binding energy obtained from the first part , the photoionization cross - section of the impurity is calculated
在第二部分，我们采用第一部分所选的变分波函数和得到的束缚能进一步计算了类氢杂质体系的光致电离截面。 |
| 4. | In the calculation of the photoionization cross - section , we find that with the changing of the photon energy , the variation scope of the photoionization cross - section of the envelop function in the previous references is much smaller than that in this paper
在计算光电离截面时，我们发现:随光子能量的变化，前人选取的包络函数计算得到的光电离截面的变化范围比我们的结果小很多。 |
| 5. | In this paper , based on the previous works , we study the quality of a hydrogenic impurity in gaas / gai - xalxas rectangular quantum wires in detail . using variational approach , we calculate the binding energy and the photoionization cross - section of the impurity in the system
本文在前人工作的基础上，详细研究了矩形截面gaas ga _ ( 1 - x ) al _ xas ( x = 0 . 3 )量子阱线中的类氢杂质体系的性质，采用变分技术计算了此体系的束缚能及其光致电离截面。 |
| 6. | Finally , a specific analysis is made for our results . because we have considered the correlation between the confined and non - confined direction of the wire , the binding energy is improved and correspondingly the threshold energy is enhanced , which results in the declinement of the photoionization cross - section
最后对所得结果进行了详细的讨论，山于我们选取的波函数考虑到限制方向与非限制方向的相关性因素，从而提高了杂质的束缚能（在宽阶时尤为明显x即提高了所谓的阈能（ e ，导致了光电离截面值的减小 |
